datasheet C epc3xx-lccxx photodiode evaluationboard epc3xx-lccxx general description epc300 or epc330 photodiodes in csp-housing on lcc-housing carrierboard for part evaluation purpose of the epc3xx family products. the epc3xx family products are high-sensitive photodiodes for light-barrier, light-curtain and the like applications. they allow the design of sensors or of short to long range light barriers from a few millimeters up to tens of meters. linear or two dimensional arrays can be formed for any application: triangulation, spot location, angle measurement, rotary encoder, sensor or similar. spectral sensitive detector can e asi ly be designed by applying color filters in front of the photodiodes. the photodiodes are designed to be used in reverse-bias mode. they feature a very high quantum efficiency of 90% in the near ir range. the reverse breakdown voltage is up to 30 volts. the response time is less than 100ns. other mechanical dimensions are available upon request up to 15x15 mm or even bigger. a 15x15 mm device contains 450 single photodiodes, each individually accessible. features carrierboard in lcc-housing design with epc300 or epc330 photodiodes for easy part evaluation by users. high dynamic range. high quantum efficiency. low dark current. diodes can be used in parallel. applications light barrier ranging from millimeters to tens of meters light curtain light, smoke, liquid, leveling, triangulation detectors position detection (rotary, linear, angle, etc.) differential measurement linear photodiode arrays model no. of photo diodes diode length (mm) diode width (mm) total active area (mm2) typ. dark current at 20c (pa ) ideal bias voltage (v) wavelength (nm) footprint single diode 1 1.0 0.5 0.43 20 5 400 - 1050 --- epc300-lcc4 2 1.0 1.0 0.86 40 5 400 - 1050 lcc4 EPC330-LCC32 16 4.0 2.0 6.84 320 5 400 - 1050 lcc32 wiring diagram grid: 2.5mm points: 0 lines: 0.02cm 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 d16 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 1 3 5 7 9 11 13 15 32, 30, 28, 26 2, 4, 6, 8 17 19 21 23 25 27 29 31 3 4 d2 d1 3 4 2 1 1 2 24, 22, 20, 18 10, 12, 14, 16 evaluationboard ep3xx-lccxx grid: 2.5mm points: 0 lines: 0.02cm 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 d16 d15 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 1 3 5 7 9 11 13 15 32, 30, 28, 26 2, 4, 6, 8 17 19 21 23 25 27 29 31 3 4 d2 d1 3 4 2 1 1 2 24, 22, 20, 18 10, 12, 14, 16 evaluationboard ep3xx-lccxx figure 1 : schematic epc300-lcc4 figure 2 : schematic EPC330-LCC32 ? 2012 espros photonics corporation characteristics subject to change without notice 1 / 2 datasheet epc3xx-lccxx - v1.0 www.espros.ch
absolute maximum ratings operating ratings reverse voltage v r 30.0 v reverse voltage v r +1.5v to +20v breakdown voltage between diodes 10.0 v esd rating of jedec hbm class 2 (<2kv) storage temperature (t a ) -40 c to +85 c operating temperature (t a ) -40 c to +85 c soldering lead temperature (t l ), 4 sec +260c humidity, non-condensing 5% to 95% note 1: information only. refer to the datasheet epc3xx for detailed and valid technical specifications. note 2: unless otherwise stated, data apply for individual photodiodes @ v r = 5.0 v, -40c < t a < +85c, r l = 50 . general characteristics symbol parameter min. typ. max. unit s max. wavelength @ max. sensitivity 850 nm wavelength range: s = 20 % to s max 400 1050 nm s spectral sensitivity @ = 850nm, v r = 5v, i e = 1 mw/cm 2 , type epc300 0.6 a/w quantum efficiency @ = 850nm, v r = 5v, i e = 1 mw/cm 2 , type epc300 90 % type specific characteristics @ +25c (all diodes of the array connected in parallel) symbol parameter type min. typ. max. unit i p photo current @ v r = 5v, i e = 1 mw/cm 2 , = 850 nm per diode 2.5 a epc300 5 epc330 40 i r dark current @ v r = 5 v, t a = 20c per diode 20 250 pa epc300 40 500 epc330 320 4000 i sc short-circuit current @ e = 1 mw/cm 2 per diode 2.5 a epc300 5 epc330 40 t r rise/fall time; all types @ r l = 50 , = 850 nm, i p = 200 a v r = +1.5 v 300 ns v r = +5.0 v 150 v r = +10.0 v 90 c t cross talk suppression between individual photo diodes on the same chip, if the voltage difference v diff is <100mv between individual diodes (cathodes) epc330 50 db grid: 2.5mm points: 0 lines: 0.02cm epc330 1 . 0 0 1.00 2 . 4 0 2 . 5 4 2 . 0 0 2.00 2.40 2.54 2 2 . 8 6 0 . 1 22.86 0.1 pin1 epc330 1.00 1.30 epc300 2 . 5 4 1 . 3 8 1.00 2 . 0 0 2 . 0 0 pin1 epc300 4.78 0.1 5 . 0 3 0 . 1 1.00 1.30 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1 2 3 4 grid: 2.5mm points: 0 lines: 0.02cm epc330 1 . 0 0 1.00 2 . 4 0 2 . 5 4 2 . 0 0 2.00 2.40 2.54 2 2 . 8 6 0 . 1 22.86 0.1 pin1 epc330 1.00 1.30 epc300 2 . 5 4 1 . 3 8 1.00 2 . 0 0 2 . 0 0 pin1 epc300 4.78 0.1 5 . 0 3 0 . 1 1.00 1.30 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1 2 3 4 figure 3 : dimensions epc300-lcc4 figure 4 : dimensions EPC330-LCC32 ? 2012 espros photonics corporation characteristics subject to change without notice 2 / 2 datasheet epc3xx-lccxx - v1.0 www.espros.ch
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